Skip to Main content Skip to Navigation
Journal articles

The effect of doping on the lattice parameter and properties of cubic boron nitride

Abstract : The effect of doping of cubic boron nitride with beryllium, silicon, sulfur and magnesium on the lattice parameters, electrical conductivity and ESR spectra has been studied. It is established that the degree of doping increases significantly in the case of crystallization of cubic boron nitride from BN solutions in supercritical ammonia at 3.9-4.2 GPa and 1100°C in comparison with the conventional synthesis from melts of the Mg–B–N system at 4.2 GPa and 1400°C. Doping with silicon and beryllium results in semiconductor properties of cubic boron nitride.
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-03147986
Contributor : Vladimir Solozhenko <>
Submitted on : Sunday, February 21, 2021 - 5:29:06 PM
Last modification on : Thursday, February 25, 2021 - 3:18:04 AM

File

Doped_cBN.pdf
Files produced by the author(s)

Identifiers

Citation

V. Mukhanov, A. Courac, Vladimir Solozhenko. The effect of doping on the lattice parameter and properties of cubic boron nitride. Journal of Superhard Materials, Springer Verlag, 2020, 42 (6), pp.377-387. ⟨10.3103/S1063457620060088⟩. ⟨hal-03147986⟩

Share

Metrics

Record views

60

Files downloads

52