Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

Bin Guan (1) , Hamidreza Siampour (1) , Zhao Fan (1) , Shun Wang (2) , Xiang Yang Kong (3) , Abdelmadjid Mesli (4) , Jian Zhang (5) , Yaping Dan (1)

1 University of Michigan - Shanghai Jiao Tong University Joint Institute
2 Key Laboratory of Artificial Structures and Quantum Control
3 School of Materials Science and Engineering
4 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
5 Faculty of Medicine

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10−15 cm2 s−1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value

Mots clés: IMPLANTED SILICON; ALKYL MONOLAYERS; JUNCTION FORMATION; DIFFUSION; SURFACES; SEMICONDUCTORS; PHOSPHORUS; BORON

Domaines: Sciences du Vivant [q-bio]; Bio-Informatique, Biologie Systémique [q-bio.QM]

Bin Guan, Hamidreza Siampour, Zhao Fan, Shun Wang, Xiang Yang Kong, et al.. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers. Scientific Reports, 2015, pp.1-9. ⟨10.1038/srep12641⟩. ⟨hal-01199539⟩