Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

Jacques Perrin Toinin (1) , Alain Portavoce (1) , Khalid Hoummada (1) , Michael Texier (1) , Maxime Bertoglio (1) , Sandrine Bernardini (1) , Marco Abbarchi (1) , Lee Chow (2)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 Department of Physics

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO 2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO 2 , (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

Keywords: germanium; ion implantation; porous material; POROUS GERMANIUM; SILICON NANOCRYSTALS; ION-IMPLANTATION; LIGHT-EMISSION; SI; AMORPHIZATION; TEMPERATURE; MORPHOLOGY

Domains: Physics [physics]; Mechanics [physics]; Mechanical engineering [physics.class-ph]; Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

Jacques Perrin Toinin, Alain Portavoce, Khalid Hoummada, Michael Texier, Maxime Bertoglio, et al.. Nanoporous Ge thin film production combining Ge sputtering and dopant implantation. Beilstein Journal of Nanotechnology, 2015, 6, pp.336-342. ⟨10.3762/bjnano.6.32⟩. ⟨hal-01229375⟩