SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Daniela Munteanu (1) , Jean-Luc Autran (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The Junctionless (JL) Single-Gate SOI (JL-SOI) technology is potentially interesting for future ultra-scaled devices, due to a simplified technological process and reduced leakage currents. In this work, we investigate the radiation sensitivity of JL-SOI MOSFETs and 6T SRAM cells. A detailed comparison with JL Double-Gate (JL-DG), inversion-mode (IM) SOI (IM-SOI), and IM-DG MOSFETs has been performed. 3-D simulations indicate that JL-SOI MOSFETs and SRAM cells are naturally less immune to radiation than the other structures.

Mots clés: Junctionless Single-Gate SOI MOSFET; SEU; SEE; bipolar amplification; threshold LET SRAM cell; Double-Gate MOSFET; SOI

Domaines: Micro et nanotechnologies/Microélectronique

Daniela Munteanu, Jean-Luc Autran. SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. Microelectronics Reliability, 2015, 55, pp.1501 - 1505. ⟨10.1016/j.microrel.2015.06.107⟩. ⟨hal-01429427⟩