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SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation

Abstract : The Junctionless (JL) Single-Gate SOI (JL-SOI) technology is potentially interesting for future ultra-scaled devices, due to a simplified technological process and reduced leakage currents. In this work, we investigate the radiation sensitivity of JL-SOI MOSFETs and 6T SRAM cells. A detailed comparison with JL Double-Gate (JL-DG), inversion-mode (IM) SOI (IM-SOI), and IM-DG MOSFETs has been performed. 3-D simulations indicate that JL-SOI MOSFETs and SRAM cells are naturally less immune to radiation than the other structures.
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Daniela Munteanu, Jean-Luc Autran. SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. Microelectronics Reliability, Elsevier, 2015, 55, pp.1501 - 1505. ⟨10.1016/j.microrel.2015.06.107⟩. ⟨hal-01429427⟩

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