Conference papers
Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation
Abstract : In this work, Molecular Beam Epitaxy (MBE) grown tunnel junctions (TJs) based on GaAs(Sb)(In) materials are experimentally and numerically studied. From simple GaAs TJs grown with various n-doping levels, we develop a semi-classical interband tunneling model able to quantify the magnitude of the tunneling current density, which shows that direct interband tunneling is the predominant tunneling mechanism in GaAs tunnel junctions instead of trap-assisted-tunneling mechanisms. Numerical simulations based on non equilibrium perturbation theory through Non Equilibrium Green's Functions (NEGF) and a multi-band kp hamiltonian that includes both gamma and L valleys were performed by the IM2NP (Marseille) and confirmed this result. In order to further improve the performance of the TJs, we are fabricating a type II tunnel heterojunction based on GaAsSb and InGaAs materials.
Keywords :
Green's function methods
III-V semiconductors
molecular beam epitaxial growth
solar cells
InGaAs
nonequilibrium perturbation
nonequilibrium Green's functions
gallium arsenide
k.p calculations
GaAsSb
InGaAs materials
GaAsSb materials
multiband kp Hamiltonian
indium compounds
current density
numerical analysis
semiconductor doping
tunnel diodes
type II heterojunction tunnel diodes
multijunction solar cells
molecular beam epitaxy
n-doping levels
MBE
GaAs tunnel junctions
numerical simulations
semiclassical interband tunneling
tunneling current density
direct interband tunneling
semiconductor heterojunctions
Cited literature [6 references]
https://hal-amu.archives-ouvertes.fr/hal-01436488
Contributor : Im2np Bibliométrie <>
Submitted on : Thursday, March 26, 2020 - 8:29:15 PM
Last modification on : Monday, July 5, 2021 - 3:44:07 PM
Contributor : Im2np Bibliométrie <>
Submitted on : Thursday, March 26, 2020 - 8:29:15 PM
Last modification on : Monday, July 5, 2021 - 3:44:07 PM
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article_KevinLouarn.pdf
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