Skip to Main content Skip to Navigation
Conference papers

Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation

Abstract : In this work, Molecular Beam Epitaxy (MBE) grown tunnel junctions (TJs) based on GaAs(Sb)(In) materials are experimentally and numerically studied. From simple GaAs TJs grown with various n-doping levels, we develop a semi-classical interband tunneling model able to quantify the magnitude of the tunneling current density, which shows that direct interband tunneling is the predominant tunneling mechanism in GaAs tunnel junctions instead of trap-assisted-tunneling mechanisms. Numerical simulations based on non equilibrium perturbation theory through Non Equilibrium Green's Functions (NEGF) and a multi-band kp hamiltonian that includes both gamma and L valleys were performed by the IM2NP (Marseille) and confirmed this result. In order to further improve the performance of the TJs, we are fabricating a type II tunnel heterojunction based on GaAsSb and InGaAs materials.
Complete list of metadatas

Cited literature [6 references]  Display  Hide  Download

https://hal-amu.archives-ouvertes.fr/hal-01436488
Contributor : Im2np Bibliométrie <>
Submitted on : Thursday, March 26, 2020 - 8:29:15 PM
Last modification on : Thursday, June 11, 2020 - 5:04:10 PM

File

article_KevinLouarn.pdf
Files produced by the author(s)

Identifiers

Citation

Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, Dimitri Hapiuk, Christophe Licitra, et al.. Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩. ⟨hal-01436488⟩

Share

Metrics

Record views

815

Files downloads

525