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Conference papers

In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth

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Conference papers
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https://hal-amu.archives-ouvertes.fr/hal-01452239
Contributor : Im2np Bibliométrie <>
Submitted on : Wednesday, February 1, 2017 - 5:02:32 PM
Last modification on : Friday, March 29, 2019 - 10:36:05 AM

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  • HAL Id : hal-01452239, version 1

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M.G. Tsoutsouva, T. Riberi – Béridot, G. Regula, G. Reinhart, J. Baruchel, et al.. In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth. EDS (Extended Defects in Semiconductors) 2016, Sep 2016, Les Issambres, France. ⟨hal-01452239⟩

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