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In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth

M.G. Tsoutsouva 1 T. Riberi – Béridot 1 G. Regula 1 G. Reinhart 1 J. Baruchel 2 Nathalie Mangelinck-Noël 1 
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 ESRF - European Synchrotron Radiation Facility
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Conference papers
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https://hal-amu.archives-ouvertes.fr/hal-01452239
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Submitted on : Wednesday, February 1, 2017 - 5:02:32 PM
Last modification on : Thursday, June 9, 2022 - 8:20:08 AM

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  • HAL Id : hal-01452239, version 1

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UNIV-TLN | CNRS | UNIV-AMU | IM2NP | MCA_IM2NP

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M.G. Tsoutsouva, T. Riberi – Béridot, G. Regula, G. Reinhart, J. Baruchel, et al.. In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth. EDS (Extended Defects in Semiconductors) 2016, Sep 2016, Les Issambres, France. ⟨hal-01452239⟩

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