In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth

M.G. Tsoutsouva; T. Riberi – Béridot; G. Regula; G. Reinhart; J. Baruchel; Nathalie Mangelinck-Noël

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In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth

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M.G. Tsoutsouva

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

T. Riberi – Béridot

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

G. Regula

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

G. Reinhart

Function : Author
PersonId : 18167
IdHAL : guillaume-reinhart
ORCID : 0000-0003-4439-047X
IdRef : 113655053

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

J. Baruchel

Function : Author

European Synchrotron Radiation Facility

Nathalie Mangelinck-Noël

Function : Author
PersonId : 17884
IdHAL : nathalie-mangelinck-noel
ORCID : 0000-0001-8570-6464
IdRef : 180364081

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Chemical Sciences Material chemistry

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https://hal-amu.archives-ouvertes.fr/hal-01452239

Submitted on : Wednesday, February 1, 2017-5:02:32 PM

Last modification on : Thursday, June 9, 2022-8:20:08 AM

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hal-01452239 , version 1 (01-02-2017)

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HAL Id : hal-01452239 , version 1

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M.G. Tsoutsouva, T. Riberi – Béridot, G. Regula, G. Reinhart, J. Baruchel, et al.. In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth. EDS (Extended Defects in Semiconductors) 2016, Sep 2016, Les Issambres, France. ⟨hal-01452239⟩

In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth

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