Abstract : Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.
https://hal-amu.archives-ouvertes.fr/hal-01452646 Contributor : Im2np BibliométrieConnect in order to contact the contributor Submitted on : Thursday, February 2, 2017 - 10:01:23 AM Last modification on : Wednesday, November 3, 2021 - 7:27:41 AM
A. M. Strel’chuk, B. Berenguier, E. Yakimov, L. Ottaviani. Recombination processes in 4H-SiC pn structures. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.345-348. ⟨hal-01452646⟩