Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon

T. David , K. Liu , Luc Favre (1) , A. Ronda (1) , Marco Abbarchi , M. Naffouti , J.N. Aqua , Isabelle Berbezier (1) , S. Fernandez , M.I. Richard (1) , O. Thomas (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

T. David, K. Liu, Luc Favre, A. Ronda, Marco Abbarchi, et al.. Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon. International Conference on Nanostructures and nanomaterials self-assembly (NanoSEA), Jul 2016, Griadini Naxos, Italy. ⟨hal-01454802⟩