Strain distribution induced in SOI photonic substrate by TSVs, using advanced X- ray nano-diffraction

S. Escoubas; B. Vianne; M.I. Richard; V. Fiori; A. Farcy; O. Thomas

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Strain distribution induced in SOI photonic substrate by TSVs, using advanced X- ray nano-diffraction

(1) , , (1) , , , (1)

1

S. Escoubas

Function : Author
PersonId : 19476
IdHAL : stephanie-escoubas
ORCID : 0000-0001-9436-0055
IdRef : 220600821

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

B. Vianne

Function : Author

M.I. Richard

Function : Author
PersonId : 736272
IdHAL : marie-ingrid-richard
ORCID : 0000-0002-8172-3141
IdRef : 130070289

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

CV

V. Fiori

Function : Author

A. Farcy

Function : Author

O. Thomas

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-01454828

Submitted on : Friday, February 3, 2017-9:37:31 AM

Last modification on : Friday, March 24, 2023-2:53:03 PM

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hal-01454828 , version 1 (03-02-2017)

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HAL Id : hal-01454828 , version 1

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S. Escoubas, B. Vianne, M.I. Richard, V. Fiori, A. Farcy, et al.. Strain distribution induced in SOI photonic substrate by TSVs, using advanced X- ray nano-diffraction. Materials for Advanced Metallization, MAM 2016, Mar 2016, Brussels, Belgium. ⟨hal-01454828⟩

Strain distribution induced in SOI photonic substrate by TSVs, using advanced X- ray nano-diffraction

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