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Evaluating Young’s modulus in silicon nitrides via the refinement of the diffraction pattern from silicon strained by nitride lines

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https://hal-amu.archives-ouvertes.fr/hal-01454833
Contributor : Im2np Bibliométrie <>
Submitted on : Friday, February 3, 2017 - 9:40:00 AM
Last modification on : Wednesday, May 16, 2018 - 3:04:02 PM

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  • HAL Id : hal-01454833, version 1

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Y. Ezzaidi, S. Escoubas, G. Gaudeau, D. Benoit, P. Morin, et al.. Evaluating Young’s modulus in silicon nitrides via the refinement of the diffraction pattern from silicon strained by nitride lines. Advanced Metallization, MAM 2016, Mar 2016, Brussels, Belgium. ⟨hal-01454833⟩

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