Evaluating Young’s modulus in silicon nitrides via the refinement of the diffraction pattern from silicon strained by nitride lines - Aix-Marseille Université Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

Evaluating Young’s modulus in silicon nitrides via the refinement of the diffraction pattern from silicon strained by nitride lines

Fichier non déposé

Dates et versions

hal-01454833 , version 1 (03-02-2017)

Identifiants

  • HAL Id : hal-01454833 , version 1

Citer

Y. Ezzaidi, S. Escoubas, G. Gaudeau, D. Benoit, P. Morin, et al.. Evaluating Young’s modulus in silicon nitrides via the refinement of the diffraction pattern from silicon strained by nitride lines. Advanced Metallization, MAM 2016, Mar 2016, Brussels, Belgium. ⟨hal-01454833⟩
56 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More