Passivation of Ge and GaAs with self−assembled organic monolayers

V. Gadenne; G. Delafosse; L. Fillaud; B. Jousselme; V. Malytskyi; J.M. Raimundo; L. Patrone

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Passivation of Ge and GaAs with self−assembled organic monolayers

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1

V. Gadenne

Function : Author
PersonId : 180211
IdHAL : virginie-gadenne
ORCID : 0000-0002-8029-5894
IdRef : 152912452

G. Delafosse

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

L. Fillaud

Function : Author

B. Jousselme

Function : Author

V. Malytskyi

Function : Author

J.M. Raimundo

Function : Author
PersonId : 754984
IdHAL : jean-manuel-raimundo
ORCID : 0000-0003-4090-0479
IdRef : 188867163

L. Patrone

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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Submitted on : Monday, February 6, 2017-9:40:07 AM

Last modification on : Wednesday, February 8, 2023-5:11:01 PM

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hal-01456858 , version 1 (06-02-2017)

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HAL Id : hal-01456858 , version 1

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V. Gadenne, G. Delafosse, L. Fillaud, B. Jousselme, V. Malytskyi, et al.. Passivation of Ge and GaAs with self−assembled organic monolayers. NanoSEA (Nanostructures and Nanomaterials Self−Assembly), Jul 2016, Giardini Naxos, Italy. ⟨hal-01456858⟩

Passivation of Ge and GaAs with self−assembled organic monolayers

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