Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories - Archive ouverte HAL

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Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories

(1) , (1) , (1)

1

P. Canet

Function : Author
PersonId : 18716
IdHAL : pierre-canet

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

J. Postel-Pellerin

Function : Author
PersonId : 18579
IdHAL : jeremy-postel-pellerin
ORCID : 0000-0002-4094-0190
IdRef : 134636317

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Hassen Aziza

Function : Author
PersonId : 177966
IdHAL : azizah
ORCID : 0000-0002-8278-7462
IdRef : 085275581

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-01463140

Submitted on : Thursday, February 9, 2017-2:01:22 PM

Last modification on : Friday, March 24, 2023-2:53:03 PM

Dates and versions

hal-01463140 , version 1 (09-02-2017)

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HAL Id : hal-01463140 , version 1

Cite

P. Canet, J. Postel-Pellerin, Hassen Aziza. Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories. 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), Sep 2016, Halle, Germany. ⟨hal-01463140⟩

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