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Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories

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https://hal-amu.archives-ouvertes.fr/hal-01463140
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Submitted on : Thursday, February 9, 2017 - 2:01:22 PM
Last modification on : Wednesday, March 25, 2020 - 3:50:03 PM

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  • HAL Id : hal-01463140, version 1

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P. Canet, J. Postel-Pellerin, Hassen Aziza. Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories. 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), Sep 2016, Halle, Germany. ⟨hal-01463140⟩

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