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Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition

M. Prestigiacomo 1 F. Bedu 1, 2 F. Jandard 1, 2 D. Tonneau 1, 2 H. Dallaporta 2 L. Roussel 3 P. Sudraud 3
1 CRMCN - Centre de recherche de la matière condensée et des nanosciences
2 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
3 ZAC Saint Charles - Orsay Physics
Abstract : We studied the behavior of tungsten wires, fabricated by focused-ion-beam-induced deposition and subjected to high current density. We present a simple electrical treatment, which allows an improved wire resistivity of more than 80%. We have distinguished two steps in the treatment. When the current density reaches 1.4x107 A/cm2, Ga atoms segregate and form droplets on the wire. As the current density increases, new droplets appear and merge into a single droplet. At 5.8x107 A/cm2, the droplet evaporates, the resistance is lost and the wire crystallizes. The final resistivity is close to 55 µV cm. The same treatment applied to as-deposited platinum wires does not lead to the same observations: neither segregation nor crystallization was found.
Keywords : FIB FIB induced deposition nano wires
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Journal articles
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https://hal-amu.archives-ouvertes.fr/hal-01578387
Contributor : Frédéric Bedu <>
Submitted on : Tuesday, August 29, 2017 - 10:33:45 AM
Last modification on : Thursday, February 7, 2019 - 6:34:01 PM

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M. Prestigiacomo, F. Bedu, F. Jandard, D. Tonneau, H. Dallaporta, et al.. Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition. Applied Physics Letters, American Institute of Physics, 2005, ⟨10.1063/1.1927714⟩. ⟨hal-01578387⟩

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