Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition

M. Prestigiacomo (1) , F. Bedu (1, 2) , F. Jandard (1, 2) , D. Tonneau (1, 2) , H. Dallaporta (2) , L. Roussel (3) , P. Sudraud (3)

1 CRMCN - Centre de recherche de la matière condensée et des nanosciences
2 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
3 ZAC Saint Charles - Orsay Physics

We studied the behavior of tungsten wires, fabricated by focused-ion-beam-induced deposition and subjected to high current density. We present a simple electrical treatment, which allows an improved wire resistivity of more than 80%. We have distinguished two steps in the treatment. When the current density reaches 1.4x107 A/cm2, Ga atoms segregate and form droplets on the wire. As the current density increases, new droplets appear and merge into a single droplet. At 5.8x107 A/cm2, the droplet evaporates, the resistance is lost and the wire crystallizes. The final resistivity is close to 55 µV cm. The same treatment applied to as-deposited platinum wires does not lead to the same observations: neither segregation nor crystallization was found.

Mots clés: FIB; FIB induced deposition; nano wires

Domaines: Science des matériaux [cond-mat.mtrl-sci]

M. Prestigiacomo, F. Bedu, F. Jandard, D. Tonneau, H. Dallaporta, et al.. Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition. Applied Physics Letters, 2005, ⟨10.1063/1.1927714⟩. ⟨hal-01578387⟩