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Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

R. Ribeiro-Palau 1 F. Lafont 1 J. Brun-Picard 1 D. Kazazis 2 A. Michon 3 F. Cheynis 4 O. Couturaud 5 C. Consejo 5 Benoit Jouault 5 W. Poirier 1 F. Schopfer 1 
1 LNE - Laboratoire National de Métrologie et d'Essais [Trappes]
2 LPN - Laboratoire de photonique et de nanostructures
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
5 L2C - Laboratoire Charles Coulomb
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Journal articles
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https://hal-amu.archives-ouvertes.fr/hal-01615243
Contributor : Fabien Cheynis Connect in order to contact the contributor
Submitted on : Thursday, October 12, 2017 - 10:33:05 AM
Last modification on : Friday, August 5, 2022 - 10:41:11 AM

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CNRS | UNIV-AMU | L2C | CINAM | LNE | MIPS | UNIV-MONTPELLIER | UNIV-COTEDAZUR | CRHEA

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R. Ribeiro-Palau, F. Lafont, J. Brun-Picard, D. Kazazis, A. Michon, et al.. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. Nature Nanotechnology, 2015, 10 (11), pp.965 - 971. ⟨10.1038/nnano.2015.192⟩. ⟨hal-01615243⟩

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