Crossing the threshold of ultrafast laser writing in bulk silicon

Abstract : An important challenge in the field of three-dimensional ultrafast laser processing is to achieve permanent modifications in the bulk of silicon and narrow-gap materials. Recent attempts by increasing the energy of infrared ultrashort pulses have simply failed. Here, we establish that it is because focusing with a maximum numerical aperture of about 1.5 with conventional schemes does not allow overcoming strong nonlinear and plasma effects in the pre-focal region. We circumvent this limitation by exploiting solid-immersion focusing, in analogy to techniques applied in advanced microscopy and lithography. By creating the conditions for an interaction with an extreme numerical aperture near 3 in a perfect spherical sample, repeatable femtosecond optical breakdown and controllable refractive index modifications are achieved inside silicon. This opens the door to the direct writing of three-dimensional monolithic devices for silicon photonics. It also provides perspectives for new strong-field physics and warm-dense-matter plasma experiments.
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Article dans une revue
Nature Communications, Nature Publishing Group, 2017, 8 (1), 〈10.1038/s41467-017-00907-8〉
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Soumis le : jeudi 12 avril 2018 - 16:12:24
Dernière modification le : samedi 21 avril 2018 - 01:13:01


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Margaux Chanal, Vladimir Yu. Fedorov, Maxime Chambonneau, Raphaël Clady, Stelios Tzortzakis, et al.. Crossing the threshold of ultrafast laser writing in bulk silicon. Nature Communications, Nature Publishing Group, 2017, 8 (1), 〈10.1038/s41467-017-00907-8〉. 〈hal-01629428〉



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