ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature

Luís F da Silva (1, 2) , Mattia A Lucchini (3) , Jean-Claude M 'Peko (4) , Sandrine Bernardini (5) , Khalifa Aguir (5) , Caue Ribeiro , Elson Longo (6) , Markus Niederberger (3)

1 UFSCar - Universidade Federal de São Carlos [São Carlos]
2 D-MATL - Department of Materials [ETH Zürich]
3 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]
4 Sao Carlos Institute of Physics, University of Sao Paulo
5 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
6 UNESP - Universidade Estadual Paulista Júlio de Mesquita Filho = São Paulo State University

We report herein the efficiency of microwave-assisted synthesis for obtaining ZnO/SnO2 heterostructures for room-temperature gas-sensing applications. The sensing performances of the traditional oxide materials have been found for applications above 200 °C. However, these temperatures were here reduced to room temperature by considering sensing activity photoactivated by UV light, even for ppb ozone (O3) levels. The heterojunctions exhibited a fast response, total reversibility, and selectivity to oxidizing gases, especially O3 gas. This investigation provides an efficient way to obtain heterostructures exhibiting remarkable properties for practical applications as O3 gas sensor devices.

Mots clés: microwave-assisted synthesis; ZnO; SnO2; heterojunction; chemresistors; UV- photoactivated; room-temperature; ozone gas

Domaines: Micro et nanotechnologies/Microélectronique

Luís F da Silva, Mattia A Lucchini, Jean-Claude M 'Peko, Sandrine Bernardini, Khalifa Aguir, et al.. ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature. Proceedings, 2017, 1 (4), pp.3 - 6. ⟨10.3390/proceedings1040418⟩. ⟨hal-01632264⟩