ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature - Archive ouverte HAL Access content directly
Journal Articles Proceedings Year : 2017

ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature

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Abstract

We report herein the efficiency of microwave-assisted synthesis for obtaining ZnO/SnO2 heterostructures for room-temperature gas-sensing applications. The sensing performances of the traditional oxide materials have been found for applications above 200 °C. However, these temperatures were here reduced to room temperature by considering sensing activity photoactivated by UV light, even for ppb ozone (O3) levels. The heterojunctions exhibited a fast response, total reversibility, and selectivity to oxidizing gases, especially O3 gas. This investigation provides an efficient way to obtain heterostructures exhibiting remarkable properties for practical applications as O3 gas sensor devices.
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Dates and versions

hal-01632264 , version 1 (09-11-2017)

Identifiers

Cite

Luís F da Silva, Mattia A Lucchini, Jean-Claude M 'Peko, Sandrine Bernardini, Khalifa Aguir, et al.. ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature. Proceedings, 2017, 1 (4), pp.3 - 6. ⟨10.3390/proceedings1040418⟩. ⟨hal-01632264⟩
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