Electronic and transport properties of Mg2Si under isotropic strains - Archive ouverte HAL Access content directly
Journal Articles Intermetallics Year : 2014

Electronic and transport properties of Mg2Si under isotropic strains

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hal-01756337 , version 1 (01-04-2018)

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H. Balout, Pascal Boulet, M.-C. Record. Electronic and transport properties of Mg2Si under isotropic strains. Intermetallics, 2014, 50, pp.8 - 13. ⟨10.1016/j.intermet.2014.02.002⟩. ⟨hal-01756337⟩
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