Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies - Archive ouverte HAL Access content directly
Journal Articles Microelectronic Engineering Year : 2017

Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies

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Abstract

The Fully-Depleted Silicon-on-Insulator (FD-SOI) technology for advanced CMOS devices is based on SOI substrates formed by an ultra-thin Si or SiGe film on a thick insulator. A reduction of parasitic resistances of such CMOS components is obtained with the Raised Source and Drain (RSD) technology. In this work we show that modifying the Siconi TM plasma-based etching process widely used in microelectronic and/or combining it to wet-etching methods allows to improve the principal steps of fabrication of RSD FD-SOI CMOS devices. More precisely, using sampling areas on 300 mm wafers that simulate the principal stages of FD-SOI building, (i) we show that a modified SiCoNi process may be used to increase the etching selectivity necessary to dissolve the oxide layer while maintaining a low-k spacer of high quality, (ii) we propose a combination of optimized SiCoNi-dry and wet etching that reduces the post-etching roughness and the contamination level of the channel surface before the subsequent epitaxy.
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Dates and versions

hal-01784096 , version 1 (03-05-2018)

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M. Labrot, F. Cheynis, D. Barge, P. Maury, M. Juhel, et al.. Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies. Microelectronic Engineering, 2017, 180, pp.56 - 64. ⟨10.1016/j.mee.2017.04.009⟩. ⟨hal-01784096⟩
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