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Thiol-functionalization of Mn5Ge3 thin films

Abstract : Hybrid organic/inorganic interfaces could pave the way to chemically designed or new multifunctional electronic devices, in particular in the spintronics field where, for instance, the interfacial spin polarization can be tuned through chemical interactions and surface modifications. We report herein, for the very first time, the assays of self-assembled monolayers (SAMs) formation on Mn 5 Ge 3 surface. Interestingly, Mn 5 Ge 3 is a ferromagnetic metal possessing interesting features for spintronics such as a high Curie temperature, a capability to grow epitaxially on Ge germanium that is a key point for integration in the mainstream Si technology. Mn 5 Ge 3 thin films are synthesized by molecular beam epitaxy under ultra-vacuum condition. We studied the Mn 5 Ge 3 surface prior to deposition of SAMs, meaning the surface exposed to air and different solvents, by XPS and contact angle measurements leading to the value of the surface tension of this surface. Then SAMs of octanethiol and perfluorodecanethiol are formed on Mn 5 Ge 3 surface at room temperature. The best experimental conditions to form the SAMs are found for an immersion time of 36 h and a concentration of 4 mM.
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Submitted on : Thursday, May 3, 2018 - 9:45:06 AM
Last modification on : Thursday, June 9, 2022 - 11:12:02 AM
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Marta K Schütz, Matthieu Petit, Lisa Michez, Alain Ranguis, Guillaume Monier, et al.. Thiol-functionalization of Mn5Ge3 thin films. Applied Surface Science, Elsevier, 2018, 451, pp.191-197. ⟨10.1016/j.apsusc.2018.04.231⟩. ⟨hal-01784119⟩



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