Abstract : Selective epitaxial growth (SEG) of highly boron-doped SiGe (SiGe:B) is a key step to realize Raised Source and Drain (RSD) for applications in SiGe-based microelectronic devices. This paper is devoted to the optimization of boron dopant profiles in SiGe RSD. For this purpose Fully-Depleted Silicon-On-Insulator (FD-SOI) blanket and patterned wafers are considered. We show that, in both situations, a weak carbon incorporation increases the dopant level and flattens the boron profile in the RSD. Finally experimental conditions for optimal RSD fabrication are reported.
https://hal-amu.archives-ouvertes.fr/hal-01784296
Contributor : Pierre Muller <>
Submitted on : Thursday, May 3, 2018 - 11:52:17 AM Last modification on : Friday, December 4, 2020 - 3:09:31 AM Long-term archiving on: : Tuesday, September 25, 2018 - 5:57:24 PM
M. Labrot, F. Cheynis, D. Barge, M. Juhel, P Müller. Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation. EECS Transactions, Oct 2016, Honolulu United States. ⟨hal-01784296⟩