Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation - Archive ouverte HAL Access content directly
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Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation

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Abstract

Selective epitaxial growth (SEG) of highly boron-doped SiGe (SiGe:B) is a key step to realize Raised Source and Drain (RSD) for applications in SiGe-based microelectronic devices. This paper is devoted to the optimization of boron dopant profiles in SiGe RSD. For this purpose Fully-Depleted Silicon-On-Insulator (FD-SOI) blanket and patterned wafers are considered. We show that, in both situations, a weak carbon incorporation increases the dopant level and flattens the boron profile in the RSD. Finally experimental conditions for optimal RSD fabrication are reported.
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Dates and versions

hal-01784296 , version 1 (03-05-2018)

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  • HAL Id : hal-01784296 , version 1

Cite

M. Labrot, F. Cheynis, D. Barge, M. Juhel, P Müller. Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation. EECS Transactions, Oct 2016, Honolulu United States. ⟨hal-01784296⟩
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