Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs

Soilihi Moindjie (1) , Jean-Luc Autran (1) , Daniela Munteanu (1) , Gilles Gasiot (2) , Philippe Roche (3)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 ST-CROLLES - STMicroelectronics [Crolles]
3 STMicroelectronics

Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65nm SRAMs.

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche. Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-01787603⟩