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Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs

Abstract : Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65nm SRAMs.
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https://hal-amu.archives-ouvertes.fr/hal-01787603
Contributor : Daniela Munteanu <>
Submitted on : Monday, May 7, 2018 - 4:44:45 PM
Last modification on : Tuesday, May 8, 2018 - 1:23:00 AM
Long-term archiving on: : Tuesday, September 25, 2018 - 4:10:05 AM

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Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche. Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-01787603⟩

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