Skip to Main content Skip to Navigation
Conference papers

Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation

Abstract : The Junctionless Double-Gate MOSFET combined with a Dual-Material Gate (JL-DMDG) is interesting for future ultra-scaled devices thanks to a simplified technological process (no junctions), reduced leakage currents and capability to reduce SCEs and HCEs (due to the step in the potential profile). In this work, we investigate the bipolar amplification and charge collection in JL-DMDG submitted to heavy-ion irradiation. We show that JL-DMDG is more sensitive to radiation than more conventional devices with single-material-gate or operating in inversion-mode.
Complete list of metadatas

Cited literature [12 references]  Display  Hide  Download

https://hal-amu.archives-ouvertes.fr/hal-01787612
Contributor : Daniela Munteanu <>
Submitted on : Monday, May 7, 2018 - 4:49:34 PM
Last modification on : Tuesday, May 8, 2018 - 1:22:56 AM
Long-term archiving on: : Tuesday, September 25, 2018 - 9:27:18 PM

File

ESREF2017_Munteanu.pdf
Files produced by the author(s)

Identifiers

  • HAL Id : hal-01787612, version 1

Collections

Citation

Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie. Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-01787612⟩

Share