J. T. Park and J. P. Colinge, Multiple-gate SOI MOSFETs: device design guidelines, IEEE Transactions on Electron Devices, vol.49, issue.12, pp.2222-2229, 2002.
DOI : 10.1109/TED.2002.805634

C. Lee, Junctionless multigate field-effect transistor, Applied Physics Letters, vol.2004, issue.5, p.53511, 2009.
DOI : 10.1109/LED.2007.909841
URL : https://cora.ucc.ie/bitstream/10468/4364/1/3339.pdf

W. Long, H. Ou, J. Kuo, and K. K. Chin, Dual-material gate (DMG) field effect transistor, IEEE Transactions on Electron Devices, vol.46, issue.5, pp.865-870, 1999.
DOI : 10.1109/16.760391

T. K. Chiang, Microelectronics Reliability, pp.693-698, 2009.

G. V. Reddy and M. J. Kumar, A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET???Two-Dimensional Analytical Modeling and Simulation, IEEE Transactions On Nanotechnology, vol.4, issue.2, pp.260-268, 2005.
DOI : 10.1109/TNANO.2004.837845

J. Singh, V. Gadi, and M. J. Kumar, Modeling a Dual-Material-Gate Junctionless FET Under Full and Partial Depletion Conditions Using Finite-Differentiation Method, IEEE Transactions on Electron Devices, vol.63, issue.6, pp.2282-2287, 2016.
DOI : 10.1109/TED.2016.2555082

P. Wang, Y. Zhuang, C. Li, Y. Li, and Z. Jiang, Subthreshold behavior models for nanoscale junctionless double-gate MOSFETs with dual-material gate stack, Japanese Journal of Applied Physics, vol.53, issue.8, p.84201, 2014.
DOI : 10.7567/JJAP.53.084201

D. Munteanu and J. L. Autran, Microelectronics Reliability, pp.1522-1526, 2016.

D. Munteanu and J. L. Autran, Microelectronics Reliability, pp.2284-2288, 2014.

D. Munteanu, V. Ferlet-cavrois, J. L. Autran, P. Paillet, J. Baggio et al., Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation, IEEE Transactions on Nuclear Science, vol.53, issue.6, pp.3363-3371, 2006.
DOI : 10.1109/TNS.2006.886206
URL : https://hal.archives-ouvertes.fr/hal-01759448

M. Vinet, Bonded planar double-metal-gate NMOS transistors down to 10 nm, IEEE Electron Device Letters, vol.26, issue.5, pp.317-319, 2005.
DOI : 10.1109/LED.2005.846580

Y. Fang and A. S. Oates, Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs, IEEE Transactions on Device and Materials Reliability, vol.11, issue.4, pp.551-554, 2011.
DOI : 10.1109/TDMR.2011.2168959