A Theoretical Analysis of Steady-State Charge Collection in Simple Diodes Under High-Injection Conditions, IEEE Transactions on Nuclear Science, vol.57, issue.2, pp.818-830 ,
DOI : 10.1109/TNS.2009.2038914
Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions, IEEE Transactions on Nuclear Science, vol.48, issue.2, pp.225-231, 2001. ,
DOI : 10.1109/23.915368
A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit, IEEE Transactions on Nuclear Science, vol.56, issue.6, pp.3152-3157 ,
DOI : 10.1109/TNS.2009.2033798
Prediction of SOI single-event effects using a simple physics-based SPICE model, IEEE Transactions on Nuclear Science, vol.52, issue.6, pp.2168-2174 ,
DOI : 10.1109/TNS.2005.860685
Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon, 1985 International Electron Devices Meeting, pp.290-293, 1985. ,
DOI : 10.1109/IEDM.1985.190954
Temperature dependence of the band gap of silicon, Journal of Applied Physics, vol.45, issue.4, pp.1846-1848, 1974. ,
DOI : 10.1103/RevModPhys.41.375
Intrinsic concentration, effective densities of states, and effective mass in silicon, Journal of Applied Physics, vol.1, issue.6, pp.2944-2954, 1990. ,
DOI : 10.1109/JRPROC.1958.286957
???type silicon, Journal of Applied Physics, vol.52, issue.6, pp.3612-3612, 1983. ,
DOI : 10.1063/1.329345
Electron and hole mobilities in silicon as a function of concentration and temperature, IEEE Transactions on Electron Devices, vol.29, issue.2, pp.292-295, 1982. ,
DOI : 10.1109/T-ED.1982.20698
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature, IEEE Transactions on Electron Devices, vol.22, issue.11, pp.1045-1047, 1975. ,
DOI : 10.1109/T-ED.1975.18267
Theory of a forward-biased diffused-junction P-L-N rectifier???Part I: Exact numerical solutions, IEEE Transactions on Electron Devices, vol.19, issue.8, pp.954-966, 1972. ,
DOI : 10.1109/T-ED.1972.17525
The High Current Limit for Semiconductor Junction Devices, Proceedings of the IRE, pp.862-872, 1957. ,
DOI : 10.1109/JRPROC.1957.278485
Device simulation of charge collection and single-event upset, IEEE Transactions on Nuclear Science, vol.43, issue.2, pp.561-575, 1996. ,
DOI : 10.1109/23.490901
Measurement of the ionization rates in diffused silicon p-n junctions, Solid-State Electronics, vol.13, issue.5, pp.583-608, 1970. ,
DOI : 10.1016/0038-1101(70)90139-5
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis, 2015 IEEE International Reliability Physics Symposium, 2015. ,
DOI : 10.1109/IRPS.2015.7112829
Numerical methods for semiconductor device simulation, IEEE Transactions on Electron Devices, vol.30, issue.9, pp.1031-1041 ,
DOI : 10.1109/T-ED.1983.21257
Large-signal analysis of a silicon Read diode oscillator, IEEE Transactions on Electron Devices, vol.16, issue.1, pp.64-77 ,
DOI : 10.1109/T-ED.1969.16566
Coupling algorithms for mixed-level circuit and device simulation, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.11, issue.8 ,
DOI : 10.1109/43.149771
Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits, IEEE Transactions on Nuclear Science, vol.61, issue.6, pp.3527-3534, 2014. ,
DOI : 10.1109/TNS.2014.2362073
URL : https://hal.archives-ouvertes.fr/hal-01430079
Eigen v3, 2010. ,
On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study, IEEE Transactions on Nuclear Science, vol.64, issue.1, pp.449-456, 2017. ,
DOI : 10.1109/TNS.2016.2634604
URL : https://hal.archives-ouvertes.fr/hal-01694468
Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS, IEEE Transactions on Nuclear Science, vol.54, issue.6, pp.2407-2412, 2007. ,
DOI : 10.1109/TNS.2007.910863
Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation, IEEE Transactions on Nuclear Science, vol.61, issue.3, pp.1498-1500, 2014. ,
DOI : 10.1109/TNS.2014.2318778
URL : https://hal.archives-ouvertes.fr/hal-01430075
Radiation effects facility RADEF, Proceedings of the Eighth IEEE International On-Line Testing Workshop (IOLTW 2002), p.188, 2002. ,
DOI : 10.1109/OLT.2002.1030212