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Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface

T. Soubiron 1 R. Stiufiuc L. Patout 2 D. Deresmes 1 B. Grandidier 1 D. Stievenard 1 J. Köble M. Maier
1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
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https://hal-amu.archives-ouvertes.fr/hal-01790106
Contributor : Loïc Patout <>
Submitted on : Friday, May 11, 2018 - 4:28:51 PM
Last modification on : Tuesday, December 8, 2020 - 3:31:28 AM

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UNIV-AMU | CNRS | UNIV-TLN | IM2NP | UNIV-LILLE | UNIV-VALENCIENNES | IEMN

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T. Soubiron, R. Stiufiuc, L. Patout, D. Deresmes, B. Grandidier, et al.. Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface. Applied Physics Letters, American Institute of Physics, 2007, 90 (10), ⟨10.1063/1.2711378⟩. ⟨hal-01790106⟩

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