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From the very first stages of Mn deposition on Ge(001) to phase segregation

Abstract : In this work, we have combined scanning tunneling microscopy (STM) with high-resolution transmission electron microscopy (HR-TEM) to investigate the initial stages of Mn deposition on Ge(001) surfaces. The growth temperature has been chosen to be (353 ± 5) K, which is typical for the synthesis of Ge 1−x Mn x thin films. At the early stage of the Mn deposition, two distinct kinds of islands are observed even for Mn coverage much smaller than a monolayer with an average size of respectively 1-2 nm and 4-5 nm. Small islands were found to nucleate in the hollow between the Ge dimer rows and they were formed by consuming Ge from two adjacent rows. This indicates that Mn-Ge alloying has been taken place even at the early stage of the Mn deposition. When the Mn coverage increases, coarsening between small islands with newly deposited ad-atoms occurs, giving rise to the formation of monosized islands. Interestingly, these nanostructures have an average size of 4-5 nm and separated by a spacing of 7-8 nm that are similar to the spatial ordering of nanocolumns resulting from spinodal decomposition in (Ge,Mn) thin films. HR-TEM analyses indicate that those 1 nanoislands are epitaxial, defect free and perfectly coherent with the Ge substrate. A subsequent anneal will result in the formation of Mn5Ge3 islands.
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Submitted on : Tuesday, October 23, 2018 - 4:34:17 PM
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Sion F Olive Mendez, Matthieu Petit, Alain Ranguis, Vinh Le Thanh, Lisa Michez. From the very first stages of Mn deposition on Ge(001) to phase segregation. Crystal Growth & Design, American Chemical Society, 2018, 18 (9), pp.5124 - 5129. ⟨10.1021/acs.cgd.8b00558⟩. ⟨hal-01902660⟩



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