Conference papers
Simulation Model of a SiC Power MOSFET Variables Estimation and Control of a Power Source
Abstract : An electro-thermal model of a power SiC MOSFET is proposed. The thermal model, is coupled with the physical model through the interaction between the transistor power loss and the junction temperature. For validation of this model, the simulation curves are compared to the manufacturer's experimental curves. As first application, a boost DC/DC converter is considered. An observer is proposed to estimate the MOSFET voltage V DS , the power and the junction temperature. These estimates are used to control the converter. The proposed model and estimator give sufficiently good temperature and power estimation. The Power source obtained using DC/DC converter is efficient, allowing the power loss reduction and robust.
Cited literature [9 references]
https://hal-amu.archives-ouvertes.fr/hal-01966868
Contributor : Kouider Nacer M'Sirdi <>
Submitted on : Sunday, December 30, 2018 - 1:17:51 AM
Last modification on : Thursday, June 11, 2020 - 3:39:55 AM
Document(s) archivé(s) le : Sunday, March 31, 2019 - 12:54:49 PM
Contributor : Kouider Nacer M'Sirdi <>
Submitted on : Sunday, December 30, 2018 - 1:17:51 AM
Last modification on : Thursday, June 11, 2020 - 3:39:55 AM
Document(s) archivé(s) le : Sunday, March 31, 2019 - 12:54:49 PM
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ICINCO_2017_161_CR.pdf
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