Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Omar Abbes; A. Portavoce; V. Le Thanh; Christophe Girardeaux; L. Michez

Journal articles

Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Omar Abbes ^{1, 2} A. Portavoce ² V. Le Thanh ¹ Christophe Girardeaux ² L. Michez ¹

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02044881
Contributor : Christophe Girardeaux Connect in order to contact the contributor
Submitted on : Thursday, February 21, 2019 - 4:42:59 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:02 PM

Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

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Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

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