Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Omar Abbes; A. Portavoce; V. Le Thanh; Christophe Girardeaux; L. Michez

Journal articles

Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Omar Abbes ^{1, 2} A. Portavoce ² V. Le Thanh ¹ Christophe Girardeaux ² L. Michez ¹

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadatas

https://hal-amu.archives-ouvertes.fr/hal-02044881
Contributor : Christophe Girardeaux <>
Submitted on : Thursday, February 21, 2019 - 4:42:59 PM
Last modification on : Wednesday, October 16, 2019 - 3:02:38 PM

Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Identifiers

Collections

Citation

Export

Metrics

77

Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Identifiers

Collections

Citation

Export

Share

Metrics

77