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Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

Omar Abbes 1, 2 A. Portavoce 2 V. Le Thanh 1 Christophe Girardeaux 2 L. Michez 1
1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
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https://hal-amu.archives-ouvertes.fr/hal-02044881
Contributor : Christophe Girardeaux Connect in order to contact the contributor
Submitted on : Thursday, February 21, 2019 - 4:42:59 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:02 PM

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  • HAL Id : hal-02044881, version 1

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Omar Abbes, A. Portavoce, V. Le Thanh, Christophe Girardeaux, L. Michez. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics. Applied Physics Letters, American Institute of Physics, 2013, 103 (17), pp.172405. ⟨hal-02044881⟩

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