Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes; Feng Xu; Alain Portavoce; Christophe Girardeaux; Khalid Hoummada; Vinh Le Thanh

Journal articles

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes ¹ Feng Xu ² Alain Portavoce ³ Christophe Girardeaux ³ Khalid Hoummada ³ Vinh Le Thanh ¹

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

2 Institute for Synchrotron Radiation

3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02044910
Contributor : Christophe Girardeaux Connect in order to contact the contributor
Submitted on : Thursday, February 21, 2019 - 4:51:51 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:02 PM

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

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Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

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