Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes; Feng Xu; Alain Portavoce; Christophe Girardeaux; Khalid Hoummada; Vinh Le Thanh

Journal articles

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Omar Abbes ¹ Feng Xu ² Alain Portavoce ³ Christophe Girardeaux ³ Khalid Hoummada ³ Vinh Le Thanh ¹

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

2 Institute for Synchrotron Radiation

3 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadatas

https://hal-amu.archives-ouvertes.fr/hal-02044910
Contributor : Christophe Girardeaux <>
Submitted on : Thursday, February 21, 2019 - 4:51:51 PM
Last modification on : Friday, February 22, 2019 - 1:27:23 AM

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Identifiers

Collections

Citation

Export

Metrics

59

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Identifiers

Collections

Citation

Export

Share

Metrics

59