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Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

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https://hal-amu.archives-ouvertes.fr/hal-02044910
Contributor : Christophe Girardeaux <>
Submitted on : Thursday, February 21, 2019 - 4:51:51 PM
Last modification on : Friday, February 22, 2019 - 1:27:23 AM

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  • HAL Id : hal-02044910, version 1

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Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, Trans Tech Publications, 2012, 323-325, pp.439-444. ⟨hal-02044910⟩

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