Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate - Archive ouverte HAL Access content directly
Journal Articles Defect and Diffusion Forum Year : 2012
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hal-02044910 , version 1 (21-02-2019)

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  • HAL Id : hal-02044910 , version 1

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Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, 2012, 323-325, pp.439-444. ⟨hal-02044910⟩
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