HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02044910
Contributor : Christophe Girardeaux Connect in order to contact the contributor
Submitted on : Thursday, February 21, 2019 - 4:51:51 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:02 PM

Identifiers

  • HAL Id : hal-02044910, version 1

Collections

Citation

Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, Trans Tech Publications, 2012, 323-325, pp.439-444. ⟨hal-02044910⟩

Share

Metrics

Record views

18