Arsenic and phosphorus codiffusion during silicon microelectronic processes

N. Rodriguez; A. Portavoce; J. Delalleau; C. Grosjean; V. Serradeil; Christophe Girardeaux

Journal Articles Thin Solid Films Year : 2010

Arsenic and phosphorus codiffusion during silicon microelectronic processes

, (1) , , , (2) , (1)

1
2

N. Rodriguez

Function : Author

A. Portavoce

Function : Author

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

J. Delalleau

Function : Author

C. Grosjean

Function : Author

V. Serradeil

Function : Author

STMicroelectronics [Rousset]

Christophe Girardeaux

Function : Author
PersonId : 172869
IdHAL : christophe-girardeaux
ORCID : 0000-0002-7159-3785
IdRef : 078779375

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Christophe Girardeaux : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02044923

Submitted on : Thursday, February 21, 2019-4:57:10 PM

Last modification on : Friday, March 24, 2023-2:53:09 PM

Dates and versions

hal-02044923 , version 1 (21-02-2019)

Identifiers

HAL Id : hal-02044923 , version 1

Cite

N. Rodriguez, A. Portavoce, J. Delalleau, C. Grosjean, V. Serradeil, et al.. Arsenic and phosphorus codiffusion during silicon microelectronic processes. Thin Solid Films, 2010, 518 (17), pp.5022-5027. ⟨hal-02044923⟩

Arsenic and phosphorus codiffusion during silicon microelectronic processes

Domains

Dates and versions

Identifiers

Cite

Export

Collections

Share