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Investigation of a new method for dopant characterization

J. Adrian 1 N. Rodriguez F. Essely 2 G. Haller 3 C. Grosjean A. Portavoce 4 Christophe Girardeaux 4
1 ELF Atochem
2 IMS - Laboratoire de l'intégration, du matériau au système
3 ST-ROUSSET - STMicroelectronics [Rousset]
4 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
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Journal articles
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https://hal-amu.archives-ouvertes.fr/hal-02044994
Contributor : Christophe Girardeaux <>
Submitted on : Thursday, February 21, 2019 - 5:12:30 PM
Last modification on : Tuesday, March 30, 2021 - 3:23:29 AM

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  • HAL Id : hal-02044994, version 1

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UNIV-AMU | CNRS | IMS-BORDEAUX-FUSION | IM2NP | IMS-BORDEAUX | UNIV-TLN

Citation

J. Adrian, N. Rodriguez, F. Essely, G. Haller, C. Grosjean, et al.. Investigation of a new method for dopant characterization. Microelectronics Reliability, Elsevier, 2007, 47 (9-11), pp.1599-1603. ⟨hal-02044994⟩

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