Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment - Archive ouverte HAL Access content directly
Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 2004

Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Christophe Girardeaux  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02045019

Submitted on : Thursday, February 21, 2019-5:29:27 PM

Last modification on : Friday, March 24, 2023-2:53:09 PM

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hal-02045019 , version 1 (21-02-2019)

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  • HAL Id : hal-02045019 , version 1

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A. Rolland, J. Bernardini, G. Moya, Christophe Girardeaux. Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2004, 566-568, pp.1163-1167. ⟨hal-02045019⟩

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