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Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment

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https://hal-amu.archives-ouvertes.fr/hal-02045019
Contributor : Christophe Girardeaux <>
Submitted on : Thursday, February 21, 2019 - 5:29:27 PM
Last modification on : Friday, February 22, 2019 - 1:27:23 AM

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  • HAL Id : hal-02045019, version 1

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A. Rolland, J. Bernardini, G. Moya, Christophe Girardeaux. Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment. Surface Science, Elsevier, 2004, 566-568, pp.1163-1167. ⟨hal-02045019⟩

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