Conference papers
3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET
Abstract : Dual-Material Gate Double-Gate (DMDG) structure is promising for future ultra-scaled devices thanks to its capability to reduce SCEs and HCEs. This is due to a step in the surface-potential profile which screens the source side of the channel from drain-potential variations and reduces the drain electric field. In this work, we investigate the DMDG sensitivity to single-event transients. The impact of dual gate materials on the bipolar gain is particularly addressed. We show that DMDG is naturally less radiation immune than usual single-material DG (SMSG) devices.
Cited literature [14 references]
https://hal-amu.archives-ouvertes.fr/hal-02100246
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Monday, April 15, 2019 - 4:39:01 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:03 PM
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Monday, April 15, 2019 - 4:39:01 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:03 PM
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Munteanu_DMDG_HAL.pdf
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