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3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET

Abstract : Dual-Material Gate Double-Gate (DMDG) structure is promising for future ultra-scaled devices thanks to its capability to reduce SCEs and HCEs. This is due to a step in the surface-potential profile which screens the source side of the channel from drain-potential variations and reduces the drain electric field. In this work, we investigate the DMDG sensitivity to single-event transients. The impact of dual gate materials on the bipolar gain is particularly addressed. We show that DMDG is naturally less radiation immune than usual single-material DG (SMSG) devices.
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https://hal-amu.archives-ouvertes.fr/hal-02100246
Contributor : Daniela Munteanu <>
Submitted on : Monday, April 15, 2019 - 4:39:01 PM
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  • HAL Id : hal-02100246, version 1

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Daniela Munteanu, Jean-Luc Autran. 3D Simulation of Heavy Ions-Induced Single-Event-Transient Effects in Symmetrical Dual-Material DG MOSFET. ESREF Conference, Oct 2015, Toulouse, France. ⟨hal-02100246⟩

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