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SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation

Abstract : The Junctionless (JL) Single-Gate SOI (JL-SOI) technology is potentially interesting for future ultra-scaled devices, due to a simplified technological process and reduced leakage currents. In this work, we investigate, for the first time, the radiation sensitivity of JL-SOI MOSFETs and 6T SRAM cells. A detailed comparison with JL Double-Gate (JL-DG), inversion-mode (IM) SOI (IM-SOI), and IM-DG MOSFETs has been performed. 3-D simulations indicate that JL-SOI MOSFETs and SRAM cells are naturally less immune to radiation than the other structures.
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https://hal-amu.archives-ouvertes.fr/hal-02100273
Contributor : Daniela Munteanu <>
Submitted on : Monday, April 15, 2019 - 4:50:02 PM
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Daniela Munteanu, Jean-Luc Autran. SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation. ESREF Conference, Oct 2015, Toulouse, France. ⟨hal-02100273⟩

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