SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation

Daniela Munteanu (1) , Jean-Luc Autran (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The Junctionless (JL) Single-Gate SOI (JL-SOI) technology is potentially interesting for future ultra-scaled devices, due to a simplified technological process and reduced leakage currents. In this work, we investigate, for the first time, the radiation sensitivity of JL-SOI MOSFETs and 6T SRAM cells. A detailed comparison with JL Double-Gate (JL-DG), inversion-mode (IM) SOI (IM-SOI), and IM-DG MOSFETs has been performed. 3-D simulations indicate that JL-SOI MOSFETs and SRAM cells are naturally less immune to radiation than the other structures.

Domaines: Micro et nanotechnologies/Microélectronique

Daniela Munteanu, Jean-Luc Autran. SEU Sensitivity of Junctionless SOI MOSFETs-based 6T SRAM Cells Investigated by 3D TCAD Simulation. ESREF Conference, Oct 2015, Toulouse, France. ⟨hal-02100273⟩