J. L. Autran and D. Munteanu, Soft Errors: from particles to circuits, 2015.
URL : https://hal.archives-ouvertes.fr/hal-02107670

J. L. Autran, D. Munteanu, G. Gasiot, and P. Roche, Introductory Invited Paper -Real-time soft-error rate measurements: A review, Microelectronics Reliability, vol.54, pp.1455-1476, 2014.

A. Lesea, S. Drimer, J. Fabula, C. Carmichael, and P. Alfke, The Rosetta Experiment: Atmospheric Soft Error Rate Testing in Differing Technology FPGAs, IEEE Transactions on Device and Materials Reliability, vol.5, issue.3, pp.317-328, 2005.

J. L. Autran, P. Roche, J. Borel, C. Sudre, K. Castellanicoulie et al., Altitude SEE Test European Platform (ASTEP) and First Results in CMOS 130nm SRAM, IEEE Transactions on Nuclear Science, vol.54, issue.4, pp.1002-1009, 2007.
URL : https://hal.archives-ouvertes.fr/hal-01759445

J. L. Autran, P. Roche, S. Sauze, G. Gasiot, D. Munteanu et al., Altitude and Underground Real-Time SER Characterization of CMOS 65nm SRAM, IEEE Transactions on Nuclear Science, vol.56, issue.4, pp.2258-2266, 2009.
URL : https://hal.archives-ouvertes.fr/hal-01430112

J. L. Autran, D. Munteanu, P. Roche, G. Gasiot, S. Martinie et al., Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level, Microelectronics Reliability, vol.50, pp.1822-1831, 2010.
URL : https://hal.archives-ouvertes.fr/hal-01430102

J. L. Autran, S. Serre, D. Munteanu, S. Martinie, S. Semikh et al., Real-Time Soft-Error Testing of 40nm SRAMs, International Reliability Physics Symposium (IRPS'2012), pp.3-5, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01430086

J. L. Autran, S. Serre, S. Semikh, D. Munteanu, G. Gasiot et al., Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs, IEEE Transactions on Nuclear Science, vol.59, issue.6, pp.2658-2665, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01430089

G. Just, J. L. Autran, S. Serre, D. Munteanu, S. Sauze et al., Soft Errors Induced by Natural Radiation at Ground Level in Floating Gate Flash Memories, International Reliability Physics Symposium (IRPS'2013), pp.3-4, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01430082