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Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

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https://hal-amu.archives-ouvertes.fr/hal-02111112
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Submitted on : Thursday, April 25, 2019 - 5:52:49 PM
Last modification on : Wednesday, November 3, 2021 - 7:27:43 AM

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  • HAL Id : hal-02111112, version 1

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V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, et al.. Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels. IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States. ⟨hal-02111112⟩

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