Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

V. Huard; C. Ndiaye; M. Arabi; N. Parihar; X. Federspiel; S. Mhira; S. Mahapatra; A. Bravaix

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Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

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1

V. Huard

Function : Author

C. Ndiaye

Function : Author

M. Arabi

Function : Author

N. Parihar

Function : Author

X. Federspiel

Function : Author

S. Mhira

Function : Author

S. Mahapatra

Function : Author

A. Bravaix

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Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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Submitted on : Thursday, April 25, 2019-5:52:49 PM

Last modification on : Wednesday, November 3, 2021-7:27:43 AM

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hal-02111112 , version 1 (25-04-2019)

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HAL Id : hal-02111112 , version 1

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V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, et al.. Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels. IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States. ⟨hal-02111112⟩

Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

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