Skip to Main content Skip to Navigation
Conference papers

Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

V. Huard C. Ndiaye M. Arabi N. Parihar X. Federspiel S. Mhira S. Mahapatra A. Bravaix 1
1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
Document type :
Conference papers
Complete list of metadata
https://hal-amu.archives-ouvertes.fr/hal-02111112
Contributor : Im2np Bibliométrie Connect in order to contact the contributor
Submitted on : Thursday, April 25, 2019 - 5:52:49 PM
Last modification on : Wednesday, November 3, 2021 - 7:27:43 AM

Identifiers

  • HAL Id : hal-02111112, version 1

Collections

UNIV-AMU | CNRS | IM2NP | UNIV-TLN

Citation

V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, et al.. Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels. IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States. ⟨hal-02111112⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Les métriques sont temporairement indisponibles