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Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

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1
V. Huard
  • Function : Author
C. Ndiaye
  • Function : Author
M. Arabi
  • Function : Author
N. Parihar
  • Function : Author
X. Federspiel
  • Function : Author
S. Mhira
  • Function : Author
S. Mahapatra
  • Function : Author
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hal-02111112 , version 1 (25-04-2019)

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  • HAL Id : hal-02111112 , version 1

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V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, et al.. Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels. IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States. ⟨hal-02111112⟩
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