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Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

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https://hal-amu.archives-ouvertes.fr/hal-02119405
Contributor : Daniela Munteanu <>
Submitted on : Friday, May 3, 2019 - 5:18:19 PM
Last modification on : Saturday, May 4, 2019 - 1:27:16 AM

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Daniela Munteanu, Jean-Luc Autran. Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation. J. Awrejcewicz. Computational and Numerical Simulations, INTECH, 2014, ⟨10.5772/57048⟩. ⟨hal-02119405⟩

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