Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation - Archive ouverte HAL Access content directly
Book Sections Year : 2014

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Daniela Munteanu
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
Jean-Luc Autran

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Daniela Munteanu  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02119405

Submitted on : Friday, May 3, 2019-5:18:19 PM

Last modification on : Friday, March 24, 2023-2:53:10 PM

Consult the full text

Dates and versions

hal-02119405 , version 1 (03-05-2019)

Identifiers

Cite

Daniela Munteanu, Jean-Luc Autran. Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation. J. Awrejcewicz. Computational and Numerical Simulations, INTECH, 2014, ⟨10.5772/57048⟩. ⟨hal-02119405⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

UNIV-TLN CNRS UNIV-AMU IM2NP
12 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More