A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs - Aix-Marseille Université Access content directly
Book Sections Year : 2012

A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs

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Micro and nanotechnologies/Microelectronics

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https://hal-amu.archives-ouvertes.fr/hal-02120891

Submitted on : Monday, May 6, 2019-11:46:18 AM

Last modification on : Friday, March 24, 2023-2:53:10 PM

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hal-02120891 , version 1 (06-05-2019)

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Daniela Munteanu, Jean-Luc Autran. A 2-D/3-D Schrödinger-Poisson Drift-Diffusion Numerical Simulation of Radially-Symmetric Nanowire MOSFETs. X. Peng. Nanowires - Recent Advances, INTECH, pp.341-370, 2012, 978-953-51-0898-6. ⟨10.5772/52587⟩. ⟨hal-02120891⟩

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