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Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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https://hal-amu.archives-ouvertes.fr/hal-02121221
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Monday, May 6, 2019 - 2:25:44 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:03 PM

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Daniela Munteanu, Jean-Luc Autran, Sebastien Martinie. Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation. A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩. ⟨hal-02121221⟩

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