Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation - Archive ouverte HAL Access content directly
Book Sections Year : 2011

Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Daniela Munteanu  : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02121221

Submitted on : Monday, May 6, 2019-2:25:44 PM

Last modification on : Wednesday, February 8, 2023-5:11:07 PM

Consult the full text

Dates and versions

hal-02121221 , version 1 (06-05-2019)

Identifiers

Cite

Daniela Munteanu, Jean-Luc Autran, Sebastien Martinie. Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation. A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩. ⟨hal-02121221⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

UNIV-TLN CNRS UNIV-AMU IM2NP
17 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More