3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation - Archive ouverte HAL Access content directly
Book Sections Year : 2011

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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Submitted on : Monday, May 6, 2019-2:29:04 PM

Last modification on : Wednesday, February 8, 2023-5:11:07 PM

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hal-02121229 , version 1 (06-05-2019)

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Daniela Munteanu, Jean-Luc Autran. 3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation. L. Angermann. Numerical Simulations, Applications, Examples and Theory, INTECH, pp.67-88, 2011, 978-953-307-440-5. ⟨10.5772/13231⟩. ⟨hal-02121229⟩

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