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3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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https://hal-amu.archives-ouvertes.fr/hal-02121229
Contributor : Daniela Munteanu <>
Submitted on : Monday, May 6, 2019 - 2:29:04 PM
Last modification on : Tuesday, May 7, 2019 - 1:28:44 AM

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Daniela Munteanu, Jean-Luc Autran. 3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation. L. Angermann. Numerical Simulations, Applications, Examples and Theory, INTECH, pp.67-88, 2011, 978-953-307-440-5. ⟨10.5772/13231⟩. ⟨hal-02121229⟩

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