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Electrical characterization, modeling and simulation of high-κ based MOS devices

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https://hal-amu.archives-ouvertes.fr/hal-02121367
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Monday, May 6, 2019 - 3:09:55 PM
Last modification on : Tuesday, October 19, 2021 - 11:00:03 PM

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  • HAL Id : hal-02121367, version 1

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Jean-Luc Autran, Daniela Munteanu, Michel Houssa. Electrical characterization, modeling and simulation of high-κ based MOS devices. M. Houssa. Fundamental and Technological Aspects of High-κ Gate Dielectrics, IOP Publishing, pp.251-289, 2004. ⟨hal-02121367⟩

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