Electrical characterization, modeling and simulation of high-κ based MOS devices

Jean-Luc Autran; Daniela Munteanu; Michel Houssa

Book Sections Year : 2004

Electrical characterization, modeling and simulation of high-κ based MOS devices

(1) , (1) , (2, 1)

1
2

Jean-Luc Autran

Function : Author
PersonId : 18174
IdHAL : jean-luc-autran
ORCID : 0000-0001-9893-014X
IdRef : 069261539

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Daniela Munteanu

Function : Author
PersonId : 11559
IdHAL : daniela-munteanu
ORCID : 0000-0003-3672-4433
IdRef : 095604812

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Michel Houssa

Function : Author

IMEC

Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Daniela Munteanu : Connect in order to contact the contributor

https://hal-amu.archives-ouvertes.fr/hal-02121367

Submitted on : Monday, May 6, 2019-3:09:55 PM

Last modification on : Friday, March 24, 2023-2:53:10 PM

Dates and versions

hal-02121367 , version 1 (06-05-2019)

Identifiers

HAL Id : hal-02121367 , version 1

Cite

Jean-Luc Autran, Daniela Munteanu, Michel Houssa. Electrical characterization, modeling and simulation of high-κ based MOS devices. M. Houssa. Fundamental and Technological Aspects of High-κ Gate Dielectrics, IOP Publishing, pp.251-289, 2004. ⟨hal-02121367⟩

Electrical characterization, modeling and simulation of high-κ based MOS devices

Domains

Dates and versions

Identifiers

Cite

Export

Collections

Share