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Thermal evolution of silicon carbide electronic bands

Abstract : Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular, for bands farther from the Fermi-level. However, this fundamental property is a prerequisite in understanding the electron-phonon coupling of semiconductors. Here we apply \emph{ab initio} many body perturbation theory to the electron-phonon coupling on hexagonal silicon carbide (SiC) crystals and determine the temperature dependence of the bands. We find a significant electron-phonon renormalization of the band gap at 0~K. Both the conduction and valence bands shift at elevated temperatures exhibiting a different behavior. We compare our theoretical results with the observed thermal evolution of SiC band edges, and discuss our findings in the light of high temperature SiC electronics and defect qubits operation.
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Contributor : Elena Cannuccia Connect in order to contact the contributor
Submitted on : Friday, July 19, 2019 - 3:51:38 PM
Last modification on : Wednesday, November 3, 2021 - 5:53:55 AM


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  • HAL Id : hal-02189500, version 1
  • ARXIV : 1907.06089



Elena Cannuccia, A. Gali. Thermal evolution of silicon carbide electronic bands. Physical Review Materials, American Physical Society, 2020, 4, pp.014601. ⟨hal-02189500⟩



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