Thermal evolution of silicon carbide electronic bands

Elena Cannuccia (1, 2) , A. Gali (3)

1 PIIM - Physique des interactions ioniques et moléculaires
2 Università degli Studi di Roma Tor Vergata [Roma] = University of Rome Tor Vergata
3 BME - Budapest University of Technology and Economics [Budapest]

Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular, for bands farther from the Fermi-level. However, this fundamental property is a prerequisite in understanding the electron-phonon coupling of semiconductors. Here we apply \emph{ab initio} many body perturbation theory to the electron-phonon coupling on hexagonal silicon carbide (SiC) crystals and determine the temperature dependence of the bands. We find a significant electron-phonon renormalization of the band gap at 0~K. Both the conduction and valence bands shift at elevated temperatures exhibiting a different behavior. We compare our theoretical results with the observed thermal evolution of SiC band edges, and discuss our findings in the light of high temperature SiC electronics and defect qubits operation.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Elena Cannuccia, A. Gali. Thermal evolution of silicon carbide electronic bands. 2023. ⟨hal-02189500⟩