Germanium CMOS potential from material and process perspectives: Be more positive about germanium, Japanese Journal of Applied Physics, vol.57, issue.1, p.010101, 2017. ,
High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs, 2006 International Electron Devices Meeting, pp.1-4, 2006. ,
Germanium for High Performance MOSFETs and Optical Interconnects, ECS Transactions, vol.16, issue.10, pp.3-12, 2019. ,
Investigation of capacitance?voltage characteristics in Ge /high-? MOS devices, Journal of Non-Crystalline Solids, vol.355, issue.18-21, pp.1171-1175, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-01430114
Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations, Numerical Simulations in Engineering and Science, pp.117-134, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02096696
Understanding the Average Electron?Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations, IEEE Transactions on Nuclear Science, vol.66, issue.1, pp.444-451, 2019. ,
Modeling and Simulation of Single-Event Effects in Digital Devices and ICs, IEEE Transactions on Nuclear Science, vol.55, issue.4, pp.1854-1878, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-01759437
Behavioral modeling of SRIM tables for numerical simulation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.322, pp.2-6, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01430076
Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits, Modeling and Simulation in Engineering Sciences, pp.115-137, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01433126
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits, Microelectronics Reliability, vol.54, issue.9-10, pp.2278-2283, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01430080
Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased Junctions Embedded in Circuits, IEEE Transactions on Nuclear Science, vol.61, issue.6, pp.3527-3534, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01430079
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications, Analog Integrated Circuits and Signal Processing, vol.8, issue.1, pp.83-114, 1995. ,
Robust SRAM Designs and Analysis, 2013. ,