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M. Moreau, D. Munteanu, J. L. Autran, F. Bellenger, J. Mitard et al., Investigation of capacitance?voltage characteristics in Ge /high-? MOS devices, Journal of Non-Crystalline Solids, vol.355, issue.18-21, pp.1171-1175, 2009.
URL : https://hal.archives-ouvertes.fr/hal-01430114

D. Munteanu and J. L. Autran, Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations, Numerical Simulations in Engineering and Science, pp.117-134, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02096696

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D. Munteanu and J. L. Autran, Modeling and Simulation of Single-Event Effects in Digital Devices and ICs, IEEE Transactions on Nuclear Science, vol.55, issue.4, pp.1854-1878, 2008.
URL : https://hal.archives-ouvertes.fr/hal-01759437

S. Martinie, T. Saad-saoud, S. Moindjie, D. Munteanu, and J. L. Autran, Behavioral modeling of SRIM tables for numerical simulation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.322, pp.2-6, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01430076

J. L. Autran, D. Munteanu, S. Moindjie, T. S. Saoud, V. Malherbe et al., Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits, Modeling and Simulation in Engineering Sciences, pp.115-137, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01433126

J. L. Autran, M. Glorieux, D. Munteanu, S. Clerc, G. Gasiot et al., Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits, Microelectronics Reliability, vol.54, issue.9-10, pp.2278-2283, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01430080

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URL : https://hal.archives-ouvertes.fr/hal-01430079

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