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Terrestrial Neutron-Induced Single Events in GaN

Abstract : We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (> 1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modelling approach in a generic reversely biased bulk junction.
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https://hal-amu.archives-ouvertes.fr/hal-02263529
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Tuesday, November 10, 2020 - 11:00:56 AM
Last modification on : Tuesday, October 19, 2021 - 11:00:09 PM
Long-term archiving on: : Friday, February 12, 2021 - 12:15:50 PM

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Daniela Munteanu, Jean-Luc Autran. Terrestrial Neutron-Induced Single Events in GaN. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France. ⟨hal-02263529⟩

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