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Modeling and Simulation of SEU in Bulk Si and Ge SRAM

Abstract : In this work, the random-walk drift-diffusion (RWDD) model has been coupled to a circuit simulator to investigate single event upsets (SEU) induced by alpha particles in SRAM cells with silicon or germanium as bulk material. The impact of the semiconductor properties in terms of charge generation and transport on the SEU mechanisms is illustrated and discussed.
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Submitted on : Tuesday, November 10, 2020 - 11:03:13 AM
Last modification on : Wednesday, November 3, 2021 - 7:27:46 AM
Long-term archiving on: : Friday, February 12, 2021 - 12:15:50 PM


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  • HAL Id : hal-02263530, version 1



Soilihi Moindjie, Daniela Munteanu, Jean-Luc Autran. Modeling and Simulation of SEU in Bulk Si and Ge SRAM. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France. ⟨hal-02263530⟩



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