Conference papers
Modeling and Simulation of SEU in Bulk Si and Ge SRAM
Abstract : In this work, the random-walk drift-diffusion (RWDD) model has been coupled to a circuit simulator to investigate single event upsets (SEU) induced by alpha particles in SRAM cells with silicon or germanium as bulk material. The impact of the semiconductor properties in terms of charge generation and transport on the SEU mechanisms is illustrated and discussed.
Cited literature [14 references]
https://hal-amu.archives-ouvertes.fr/hal-02263530
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Tuesday, November 10, 2020 - 11:03:13 AM
Last modification on : Wednesday, November 3, 2021 - 7:27:46 AM
Long-term archiving on: : Friday, February 12, 2021 - 12:15:50 PM
Contributor : Daniela Munteanu Connect in order to contact the contributor
Submitted on : Tuesday, November 10, 2020 - 11:03:13 AM
Last modification on : Wednesday, November 3, 2021 - 7:27:46 AM
Long-term archiving on: : Friday, February 12, 2021 - 12:15:50 PM
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ESREF_2019_SEU_SRAM_HAL.pdf
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