Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors - Archive ouverte HAL Access content directly
Conference Papers Year :

Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors

(1) , (1)
1

Abstract

This works examines the radiation response of III-V binary compound semiconductors subjected to high energy atmospheric neutrons. Production of neutron-induced secondary products and implications for single event effects are carefully analyzed and discussed. Index Terms-atmospheric neutrons, binary compound semiconductors, III-V materials, neutron cross section, elastic scattering, noneleastic interactions, nuclear data library, Geant4, numerical simulation.
Fichier principal
Vignette du fichier
RADECS_2019_III_V_Proceedings.pdf (477.96 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-02263545 , version 1 (10-11-2020)

Identifiers

  • HAL Id : hal-02263545 , version 1

Cite

Jean-Luc Autran, Daniela Munteanu. Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors. European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), Sep 2019, Biarritz, France. ⟨hal-02263545⟩
82 View
41 Download

Share

Gmail Facebook Twitter LinkedIn More