H. Aziza, P. Canet, J. Postel-pellerin, M. Moreau, J. M. Portal et al., ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology, Ultimate Integration on Silicon
URL : https://hal.archives-ouvertes.fr/hal-01745666

, International Technology Roadmap for Semiconductors

E. Shahrabi, B. Attarimashalkoubeh, J. Sandrini, and Y. Leblebici, Towards chip-level reram-cmos co-integration, International Conference on Memristive Materials, Devices and Systems (MEMRYSIS), 2017.

H. Aziza, H. Ayari, S. Onkaraiah, M. Moreau, and J. M. , Multilevel operation in oxide based resistive RAM with SET voltage modulation, International Conference on Design and Technology of Integrated Systems in nanoscale Era, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01434981

R. Waser, Nanoelectronics and Information Technology, 2012.

F. Chen, J. Y. Seok, and C. S. Hwang, Integration Technology and Cell Design, Resistive Switching, pp.573-596, 2016.

G. Molas, Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications, 2016 International Symposium on VLSI Technology, Systems and Application, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01435224

. Liang, Effect of wordline/bitline scaling on the performance, energy consumption, and reliability of cross-point memory array, ACM Journal on Emerging Technologies in Computing Systems, vol.9, issue.1, 2013.

E. I. Vatajelu, Nonvolatile memories: Present and future challenges, Design & Test Symposium, pp.61-66, 2014.

H. Ahn1, Pairing of cation vacancies and gap-state creation in TiO 2 and HfO 2, Appl. Phys. Lett, vol.90, pp.252908-252908, 2007.

C. Lien, The highly scalable and reliable hafnium oxide ReRAM and its future challenges, Solid-State and Integrated Circuit Technology (ICSICT), 2010.

M. Bocquet, Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM), Journal of Low Power Electronics and Applications, vol.4, issue.1, pp.1-14, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01737320

C. Mazure, FDSOI: From substrate to devices and circuit applications, pp.45-51, 2010.

F. Nardi, Resistive switching by voltage-driven ion migration in bipolar RRAM Part I: Experimental study, IEEE Transactions on Electron Devices, vol.59, issue.9, pp.2461-2467, 2012.

S. Larentis, Resistive switching by voltage-driven ion migration in bipolar RRAM Part II: Modeling, IEEE Trans. on Electron Devices, vol.59, issue.9, pp.2468-2475, 2012.

T. Diokh, Investigation of the Impact of the Oxide Thickness and RESET conditions on Disturb in HfO2-RRAM integrated in a 65nm CMOS Technology, International Reliability Physics Symposium, pp.3-6, 2013.

Y. C. Huang, Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays, NPG Asia Materials, vol.6, issue.2, 2014.

Y. S. Fan, High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector, ECS Solid State Letters, vol.4, issue.9, pp.41-43, 2015.