PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects

T. Luo; J. Perrin Toinin; M. Descoins; K. Hoummada; M. Bertoglio; L. Chow; D. Narducci; A. Portavoce

doi:10.1016/j.scriptamat.2018.02.037

Journal articles

PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects

T. Luo ¹ J. Perrin Toinin M. Descoins ¹ K. Hoummada ¹ M. Bertoglio ¹ L. Chow D. Narducci A. Portavoce ¹

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadata

https://hal-amu.archives-ouvertes.fr/hal-02381663
Contributor : Alain Portavoce Connect in order to contact the contributor
Submitted on : Tuesday, November 26, 2019 - 5:08:36 PM
Last modification on : Wednesday, November 3, 2021 - 7:28:20 AM

PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects

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PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects

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